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To: Ron C who wrote (4944)3/4/1999 12:57:00 AM
From: Diamondhead  Respond to of 60323
 
Latest patent:

PATENT No: 5877986
ISSUE DATE: Mar-02-1999
Multi-state Flash EEprom system on a card that includes defective cell
substitution


ASSIGNEE:
SanDisk Corporation
Sunnyvale, CA


INVENTOR:
Harari; Eliyahou
Los Gatos, CA

Norman; Robert D.
San Jose, CA

Mehrotra; Sanjay
Milpitas, CA


OTHER DETAILS:
Legal Rep:
Majestic, Parsons, Siebert Hsue

Application Date:
Dec-29-1997

Application Number:
999472

Primary Examiner:
Nelms; David





ABSTRACT:
A system of Flash EEprom memory chips with controlling
circuits serves as non-volatile memory such as that provided
by magnetic disk drives. Improvements include selective
multiple sector erase, in which any combinations of Flash
sectors may be erased together. Selective sectors among
the selected combination may also be de-selected during the
erase operation. Another improvement is the ability to remap
and replace defective cells with substitute cells. The
remapping is performed automatically as soon as a
defective cell is detected. When the number of defects in a
Flash sector becomes large, the whole sector is remapped.
Yet another improvement is the use of a write cache to
reduce the number of writes to the Flash EEprom memory,
thereby minimizing the stress to the device from undergoing
too many write/erase cycling.



To: Ron C who wrote (4944)3/6/1999 9:43:00 PM
From: Ron C  Read Replies (1) | Respond to of 60323
 
Thread:
Interesting info. re: Cameras and flash with links to more info.
zdnet.com

Ron C.
<30 7/8> (heh heh)