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To: Paul Engel who wrote (75461)	3/5/1999 2:18:00 AM
From: greenspirit	Read Replies (1) \| Respond to of 186894

Paul, a news item only you could love, or understand :-) Enjoy! DSAD process for deposition of inter layer dielectric (Assignee -- Intel Corporation) March 5, 1999 U.S. Patents via NewsEdge Corporation : Abstract: A method of depositing an inter layer dielectric. A first layer using plasma enhanced chemical vapor deposition (CVD) is deposited. It is followed by a second layer, deposited using sub atmospheric CVD. The second layer is argon sputter etched. Ex Claim Text: A method of forming an inter layer dielectric to isolate a plurality of structures with a height, a top and a bottom, formed on a substrate, and having edges forming corners between said structures, the method comprising the steps of: forming a seed layer between said structures by plasma enhanced chemical vapor deposition of a TEOS based oxide that substantially maintains the edges of the structures on the substrate; forming a gapfill layer by sub atmospheric chemical vapor deposition of the TEOS based oxide that substantially maintains the edges of the structures on the substrate; and after forming the gapfill layer, sputter etching said gapfill layer formed by the sub atmospheric chemical vapor deposition by argon sputter etching, wherein a part of a material removed from the gapfill layer by the sputter etching is deposited in the corners, wherein a tensile stress of the gapfill layer balances the compressive stress of the seed layer and the third dielectric layer, thereby producing an overall compressive stress between 0.5e9 and 1.5e9 dyne per square centimeter as result of the layers. Patent Number: 5872064 Issue Date: 1999 02 16 If you would like to purchase a copy of this patent, please call MicroPatent at 800-648-6787.