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To: Chas who wrote (43860)	3/16/1999 10:34:00 AM
From: DJBEINO	Read Replies (1) \| Respond to of 53903

Taiwan Winbond gets Toshiba 512MB DRAM technology TAIPEI, March 16 (Reuters) - Taiwan's Winbond Electronics Corp said on Tuesday that Toshiba Corp has licenced it to use Toshiba's 0.175- and 0.15-micron CMOS technology, enabling Winbond to make 512-megabit DRAM chips. Winbond said the agreement with the Japanese technology firm also granted Winbond rights to chipmaking process technology that Toshiba has developed with U.S. giant IBM Corp (NYSE:IBM - news) and Siemens AG (quote from Yahoo! UK & Ireland: SIEG.F) of Germany. The deal allows Winbond to make dynamic random-access memory chips, or DRAM, with capacity of 64, 128, 256 and 512 megabits under the Winbond brand or for Toshiba, Winbond said. Under earlier cooperation accords beginning in 1995, Toshiba had transferred 0.2-micron CMOS technology to Winbond, enabling it to make 64-megabit and 256-megabit DRAM chips. The new pact will share Toshiba's more advanced 0.175-micron and 0.15-micron CMOS process technology to Winbond, allowing it eventually to make the leap to 512-megabit DRAM, Winbond said. Manufacturing of 512-MB chips still remains some time away, Winbond said, as production processes using the 0.175-micron and 0.15-micron are still under development. Winbond is one of several Taiwan microchip makers hoping to profit from the higher-capacity DRAM designs in the wake of a fierce price war in the 16-MB DRAM market that plunged many makers into the red. Winbond said it would finance construction of production lines for the new DRAM designs using syndicated loans and funds raised through recent issues of global depositary receipts. No budget for the planned investments was given. Winbond's new No.4 wafer fabrication plant has begun production of 64-megabit and 128-megabit DRAM and its No.5 wafer fab is scheduled to start up in the second half of 1999. Both wafer fabs eventually will make 256- and 512-megabit DRAM chips, it said. biz.yahoo.com