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To: Clarksterh who wrote (21340)	3/16/1999 10:56:00 AM
From: BillyG	Read Replies (1) \| Respond to of 25960

Toshiba extends DRAM pact with Winbond to 0.18- and 0.15-micron processes A service of Semiconductor Business News, CMP Media Inc. Story posted 9 a.m. EST/6 a.m., PST, 3/16/99 TOKYO--Toshiba Corp. here today announced a DRAM manufacturing agreement with Taiwan's Winbond Electronics Corp., which will produce advanced memories with Toshiba's 0.18- and 0.15-micron CMOS process technologies. In addition, Toshiba can use Winbond as a foundry for these DRAM products. The agreement provides Winbond with processes for 64-, 128- and 256-megabit DRAMs, said Toshiba, which has licensed technology to the Taiwan chip maker since December 1995. As part of the new technology pact, Winbond engineers will be trained in development, production and process technologies at Toshiba's Advanced Microelectronics Center and Yokkaichi facilities. Toshiba will also provide initial engineering support for manufacturing at Winbond's new wafer fab in Taiwan, which will be expended to produce 256-Mbit DRAM under the arrangement.