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To: Kirk © who wrote (2640)	3/16/1999 11:33:00 AM
From: Duker	Respond to of 5867

Samsung aims to ship up to 3 million 256-Mbit SDRAMs in 1999 [Big numbers! --Duker] A service of Semiconductor Business News, CMP Media Inc. Story posted 9:30 a.m. EST/6:30 a.m., PST, 3/16/99 KIHEUNG, South Korea --Samsung Electronics Co. Ltd. here today claimed it has become the first chip maker to begin mass production of 256-megabit synchronous DRAMs using a new 0.18-micron process technology. Volume production started in March. In 1999, the Korean memory maker said it aims to ship 2 to 3 million SDRAMs, generating $200 million to $300 million in revenues. The average selling price of 256-Mbit SDRAMs in 1999 is expected to be about $105 each, according to Samsung, which was using a forecast by analysts at In-Stat. The average selling price is expected to drop to $55 in 2000 and $40 in 2001, according to Samsung. The Korean memory giant said it has begun shipping initial 256-Mbit SDRAMs to major personal computer makers, including IBM, Siemens, Dell, Compaq and Hewlett-Packard. The 256-Mbit memory is fully compatible with the current PC-100 and PC-133 standards, according to Samsung. The device has a power consumption 70 mA, and it operates at either 3.3 V or 2.5 V. While operating at 3.3 V, the maximum speed of the memories is 167 MHz. At 2.5 V, the speed is 143 MHz. Samsung said next month it plans to complete development of 256-Mbit DRAMs based on Rambus Inc.'s high-speed memory architecture.

To: Kirk © who wrote (2640)	3/16/1999 11:35:00 AM
From: Duker	Read Replies (1) \| Respond to of 5867

Toshiba extends DRAM pact with Winbond to 0.18- and 0.15-micron processes [That new fab will presumably need some new equipment? --Duker] A service of Semiconductor Business News, CMP Media Inc. Story posted 9 a.m. EST/6 a.m., PST, 3/16/99 TOKYO--Toshiba Corp. here today announced a DRAM manufacturing agreement with Taiwan's Winbond Electronics Corp., which will produce advanced memories with Toshiba's 0.18- and 0.15-micron CMOS process technologies. In addition, Toshiba can use Winbond as a foundry for these DRAM products. The agreement provides Winbond with processes for 64-, 128- and 256-megabit DRAMs, said Toshiba, which has licensed technology to the Taiwan chip maker since December 1995. As part of the new technology pact, Winbond engineers will be trained in development, production and process technologies at Toshiba's Advanced Microelectronics Center and Yokkaichi facilities. Toshiba will also provide initial engineering support for manufacturing at Winbond's new wafer fab in Taiwan, which will be expended to produce 256-Mbit DRAM under the arrangement.