To: REH who wrote (17874 ) 3/27/1999 7:10:00 AM From: REH Respond to of 93625
Samsung ramps up 256-Mbit sync DRAM Seoul, South Korea - Samsung Electronics said it has begun commercial manufacturing of 256-Mbit synchronous DRAMs, while NEC Corp. said it was ready to start sampling 128-Mbit Rambus DRAMs in April. Samsung will use its 0.18-micron process to manufacture 2 million to 3 million 256-Mbit SDRAMs this year. At an average selling price of about $100 per chip, Samsung expects to have 256-Mbit DRAM revenue of $200 million to $300 million in 1999. By 2002, the South Korean company expects the 256-Mbit market to be worth about $30 billion. The devices will operate at up to 167 MHz at 3.3-V operation, and in the 147-MHz range at 2.2 V. Samsung will use the early production units in server memory modules of 512-Mbyte and 1-Gbyte densities. Also, a spokesman said Samsung expects to complete development of a 256-Mbit Rambus DRAM in April, the first stage in readying engineering samples, using the same 0.18-micron process. NEC, meanwhile, said it will begin commercial sampling of its 128-Mbit RDRAM in April, at a sample price of $85 per chip, and start commercial production in July. The company is using its version of the ball-grid array, a "center-bonded die dimension" BGA package. Also, the Japanese manufacturer said it would produce Rambus In-line Memory Modules (RIMMs) using the 128-Mbit RDRAMs, with eight chips per module. Sherry Garber, senior analyst at Semico Research Corp. (Phoenix), said most manufacturers will develop a 0.21-micron process generation to make RDRAMs at 128 Mbits. But, because of Intel's delay in shipping its Camino chip set to PC OEMs, volume demand for the RDRAMs may not come until as late as mid-2000, she said.