To: Tony Viola who wrote (29363 ) 4/2/1999 10:17:00 AM From: Duker Read Replies (2) | Respond to of 70976
Taiwanese DRAM makes deal for finer process technologies A service of Semiconductor Business News, CMP Media Inc. Story posted 9 a.m. EST/6 a.m., PST, 4/2/99 By Mark Carroll HSINCHU, Taiwan ( ChipWire/EBN)-- Looking to move toward more profitable process geometries, two of Taiwan's DRAM makers last week announced partnership deals that will allow them to produce DRAMs in sub-0.25-micron technology. Toshiba Corp. announced that it will transfer leading-edge 0.15-micron and 0.17-micron CMOS process technologies to Winbond Electronics Corp. for use in building 64-, 128- and 256-megabit DRAMs. The potential for profit at finer geometries is impressive. Using 0.25-micron technology, about 350 64-Mbit die can potentially come from a single 8-inch wafer. At 0.2 micron, the potential yield goes to 550 die, and at 0.17 micron it jumps to 800 die per 8-inch wafer. Price is still a major concern for DRAM and a major force behind the move to smaller geometries. A 64-Mbit DRAM was selling for $9.50 in February, but pricing has fallen recently. "On the spot market, 64-Mbit DRAM is going for as low as $7.50," said Don Floyd, an analyst or ING Barings. Winbond hopes to begin producing of 128-Mbit DRAM at its Fab 4 using 0.17-micron technology in the third quarter of this year, a Winbond spokesman said. "We are also currently building our Fab 5 which will be capable of producing DRAM at 0.17 micron and below. We will begin pilot runs in our Fab 5 in the third quarter of this year." Winbond will supply Toshiba with DRAM on an OEM basis. Part of its production will also be marketed under Winbond's own brand using those technologies. Even though Winbond gets access to high-end technology, the OEM contract heavily favors Toshiba. "For the first year, Toshiba gets about 80 percent of production at a very good price," said a securities analyst here. "In the second year it drops to 65 percent, and then its a 50-50 split in the third year." Winbond can extend its product lines up to 256-Mbit DRAM using the leading-edge process technologies transferred from Toshiba. Under the contract, Winbond engineers will be trained for the process technologies at Toshiba's microelectronics technology laboratory and Yokkaichi plant. Toshiba engineers will also assist Winbond in building up its production lines at its factory, company officials said. Toshiba and Winbond first established a DRAM alliance when Toshiba transferred its 16-Mbit DRAM and high-speed SRAM technologies to Winbond in December 1995. Since then, the companies have expanded the arrangement to include production technologies for 64-Mbit and 256-Mbit DRAM using a 0.20-micron design rule. Nan Ya Technology Corp. also is refining its DRAM production capabilities. Nan Ya plans to ramp up production of 64-Mbit DRAM in the fourth quarter of this year, and has already begun developing 128-Mbit DRAM and Rambus DRAM chips. Using technology transfers from IBM, a company executive said that Nan Ya will be able to skip over the use of 0.25-micron manufacturing technology and begin to make 64-Mbit DRAMs in 0.20-micron technology. "We will move to a 0.20-micron process in the third quarter of this year," said Charles Kao, president of Nan Ya. "This year we will concentrate on 64 Mbit, moving to 128 Mbit and 256 Mbit next year. Our roadmap for 256 Mbit is not yet clear however." Nan Ya had losses of about $110 million in 1998 due to sliding DRAM prices. However, the company has recovered since November due to a fourth-quarter rebound in DRAM prices, and to its efforts to cut production costs for 16-Mbit DRAMs. Its success in mass producing 64-Mbit DRAMs will largely decide the company's performance in 1999. Nan Ya's first fab has a monthly output of 22,000 units, most of which are 16-Mbit DRAMs made with 0.28-micron technology. After starting production of 64-Mbit DRAMs, monthly output will rise to 30,000 units, of which 20,000 units will be made with 0.20-micron and 0.175-micron technology, and the remaining 10,000 units will be made using 0.28-micron technology. Nan Ya's second IC fabrication facility has been completed. "We will complete equipment loading in our Fab 2 by the end of this year," said Kao.