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Politics : Formerly About Advanced Micro Devices -- Ignore unavailable to you. Want to Upgrade?

To: Time Traveler who wrote (54377)	4/5/1999 11:46:00 PM
From: Process Boy	Respond to of 1574002

Time Traveler - This is my question about the MOT process. I have seen the documentation you have cited, in which IBM's Barrier/Seed layer appears to be about 30nm thick. I have not seen anything on MOT's Cu process, and specifically not anything on how thick the Barrier/Seed layer is at .25. As Paul earlier described, a 30m thick Barrier/Seed layer effectively reduces the width for a Damascene trench to 190nm wide, and also reduces the aspect of trench by the same amount. This increases resistivity, as the Barrier material cannot be less resistive than Cu. IBM apparently uses TaN for it's barrier seed layer (Nitride is an insulator, very high resistivity, Tantalum is I believe is something close to W (Tungsten), but I haven't popped a book to verify this. Of course, I can't comment on Intel processes of which the details have not been published. PB