To: BillyG  who wrote (21657 ) 4/27/1999 12:35:00 PM From: jbn3     Respond to    of 25960  
Bell Labs uses optical lithography to    make 0.08-micron device   SemiConductor Business News, 27-APR-99 (please excuse if already posted) semibiznews.com MURRAY HILL, NJ -- Bell Labs researchers at Lucent    Technologies Inc. here today announced they have produced the    smallest working electronic device ever made with optical    photolithography.     The experimental flash memory cell has a minimum drawn feature    size of just 80 nanometers, or 0.08 micron, according to    researchers.     To produce the flash device, the researchers used 193-nm optical    lithography system from Ultratech Stepper Inc.  The system is a    laboratory R&D tool and not viable for production.     Bell Labs researchers used phase-shift photomasks to printed a    flash memory cell measuring 80 by 160 nm. While the minimum    drawn feature size was 80 nm, the effective gate length (L-effective)    was in the range of 50 nm, based on computer models, said    researcher Ray Cirelli.     Interestingly, Bell Labs is also aggressively pursuing non-optical    exposure technology for chip production with device feature sizes in    the same range as the experimental flash device. Lucent    Technologies has teamed with Applied Materials Inc. and ASM    Lithography Holding N.V. to accelerate development of its Scalpel    electron-beam technology as a post-optical tool in the next decade.    Scalpel was invented by Bell Labs in 1989.     "The Scalpel system will have a great deal more process latitude    than the optical lithography system at these resolutions,"  noted    researcher Cirelli.     To produce the experimental 0.08-micron device with optical light,    researchers said they have developed a new class of resist materials,    based on cyclo-olefin maleic anhydride chemistry. This chemistry    results in a balance between the resist's transparency and stability    during process steps, according to researchers.     Bell Labs said another key aspect of development was the creation    of a light-absorbing material deposited as a thin layer between the    resist and the silicon wafer. This is placed on the wafer during the    early stages of the process. The material absorbs the light that    passes through the resist, reducing any unwanted reflections from    the silicon wafer below, according to researchers.     "This achievement provides technology that Lucent's semiconductor    business can put to immediate use in developing future generations    of communications integrated circuits, including ultrafast digital signal    processors and high-performance systems-on-a-chip," said Mark    Pinto, chief technical officer for Lucent's Microelectronics Group.    --J. Robert Lineback