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Politics : Formerly About Advanced Micro Devices -- Ignore unavailable to you. Want to Upgrade?


To: Yougang Xiao who wrote (55316)4/13/1999 1:37:00 PM
From: Shane Geary  Read Replies (3) | Respond to of 1573130
 
Re: Fab 30 and 0.18um etc, I include an article in December's Semiconductor Business News that interviews the general manager of Fab 30.

supersite.net

AMD says Dresden fab rivals latest Intel plants

Semiconductor Business News, © 1998, CMP Media Inc.
December 1998

By Jack Robertson

DRESDEN, Germany -- For a chip maker
that nearly stumbled in its last major
manufacturing upgrade, Advanced Micro
Devices Inc. seems to have made it back
into the race. Not only is it calling its latest
wafer fab a world-class plant but it claims
it rivals any production facility of Intel
Corp.

It had better. AMD's new Fab 30, which is located just
outside this German city, is a multibillion-dollar,
bet-the-company gamble that will play a leading
role in the chip maker's all-out fight with Intel in the
global microprocessor market.

In one of the first previews of the fab in November,
Jack Saltich, vice president and general manager of
the Fab 30, told SBN that the plant had been
designed from the ground up to use next-generation
production technology from the beginning.

Production will start up using copper interconnects,
low-k dielectrics, and SMIF (standard mechanical
interface) automation, he said. While AMD will use its
proven 0.22-micron process to get its new fab into
mass production as quickly as possible, it expects to
go into full production in the second half of 1999 using
0.18-micron design rules. That would put AMD
neck-and-neck with Intel's latest fabs, Saltich said.

First silicon is due in January on the Dresden plant's
primary product, AMD's next generation K-7
microprocessor. The fab will be capable of ramping
up to 20,000 8-inch-wafer starts a month. A second
phase would double that rate, but no decision has
been made on when that expansion would start.

AMD is counting on its new German fab to put to rest
the problems that roiled its operations last year when it
was trying to move from 0.35-micron to 0.25-micron
geometries at its Austin fab. "We don't foresee any
major problems ramping up with the industry's most
advanced process technology," a confident Saltich
said. AMD has started qualifying the tool set at the fab
here and "we haven't encountered any trouble yet,"
he said.

Fab 30 can be launched
with copper processing,
Saltich said, since it was
designed to handle the
new interconnect layer.
"We [were able to] plan
the cleanroom and tool
arrangement to solve the contamination problem," he
said, noting that retrofitting existing fabs to use copper
interconnect rarely works. For that reason, AMD's Fab
25 in Austin, which is now moving to 0.18-micron
design rules, will continue to use aluminum
metalization.

AMD wanted to use copper processing from the
beginning in Dresden to build higher performance K-7
MPUs. Copper tooling and processing also were less
expensive, Saltich added, because metal etch with
corrosive gases has been eliminated. And the
damascene copper process is one more factor in
shrinking the die size, he said, which lowers costs by
spreading production expenses over a larger number
of chips.

AMD got its copper interconnect technology from its
technology alliance with Motorola Inc.'s
Semiconductor Products Sector. "We have German
engineers working in Motorola's MOS-13 fab in Austin
who will help us implement copper here," Saltich
noted.

Dresden also will introduce low-k dielectric materials
as processing moves to 0.18-micron feature size. This
will increase K-7 speeds by greatly reducing the
intra-layer and inter-layer capacitance, he said.
AMD hasn't settled on the low-k material it will be use,
but barium-strontium-titanate (BST) and paraline
compounds are candidates.

Because Fab 30 is new, it could make maximum use of
SMIF pod automation. Much of the fab can operate
with a less-expensive Class 100 cleanroom
environment since the wafers are contained in a
protected pod, Saltich said.

The new fab uses 248-nm wavelength step-and-scan
exposure tools from ASM Lithography to pattern the
0.18-micron feature size on wafers. Hard phase-shift
masks will be used, Saltich said, to extend the krypton
fluoride deep-UV lithography system to 0.18-micron
geometries. And "there's no question," he said, that
the same technology will be able to push the 248-nm
tool to 0.15-micron feature sizes. That would probably
happen in the second half of 1999, he predicted.

For the sake of plant reliability, the Dresden fab will
also obtain its power from an on-site independent
energy plant, which is a joint venture of Meissner +
Wurst, Air Liquide, and the local Saxon state utility.
"Early on, we decided it was too risky to rely solely on
the public power supply," an AMD spokesman
remarked. "We are the sole customer" of the joint
venture, he said.

The state-of-the-art equipment installed at Fab 30
includes chemical vapor deposition (CVD) systems
from Applied Materials and Inc. Novellus Systems Inc.,
and physical vapor desposition (PVD) from Applied.
Etchers came from Applied, Tokyo Electron, and Lam
Research Inc. Tokyo Electron Ltd. supplied the trackers,
and Applied and SpeedFam International Inc.
provided the chemical mechanical polishing (CMP)
systems. Inspection tools came from KLA-Tencor Corp.



To: Yougang Xiao who wrote (55316)4/13/1999 2:08:00 PM
From: Mani1  Respond to of 1573130
 
Youngang, thanks for the URL and the post. That is pretty much what I remembered.

Also thank you for the CC number. :-)

Mani