SI
SI
discoversearch

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor.  We ask that you disable ad blocking while on Silicon Investor in the best interests of our community.  If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.
Politics : Formerly About Advanced Micro Devices -- Ignore unavailable to you. Want to Upgrade?


To: Process Boy who wrote (57245)5/5/1999 12:54:00 AM
From: Paul Engel  Read Replies (1) | Respond to of 1572771
 
PB - Re: "CoSi is also "easier" to form on ~<.2um poly lines versus TiSi due to smaller grain boundary of Co. "

Thanks for that input.

My "sixth sense" tells me you have experience with CoSi on top of poly gates.

From your comment, the gates are probably less than 0.18 Microns in length.

Paul