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Politics : RAMTRONIAN's Cache Inn
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To: NightOwl who wrote (13571)10/11/2007 11:12:29 AM
From: NightOwl   of 14464
 
Whatever happens as the technology goes forward I would expect larger percentages of the R&D dollar to go into Ferroelectric RESEARCH because: (1) it allows a Fab to make money while its doing the R&D; (2) FRAM has proven adaptability in the embedded/logic space and PZT also has huge potential in optical switching should memory and logic move in that direction; (3) when FRAM's ability to hold a charge wears out it operates just like a DRAM; (4) FRAM's basic switching mechanism is as fast as any at <100 picoseconds; and (5) solutions to DRAM's increasing "aspect ratio" problems may well benefit FRAM's move to 3D cell structures.
Message 23922216

(6) Neither MRAM nor PCRAM have any greater chance of success at achieving the target performance required of a universal memory.

This new mechanism for describing and modeling the operation of F-RAMs suggests to me that the focus of future memory circuits might move to manipulation and sensing of domain wall characteristics rather than simply forcing the zirconium atom around by brute electric force. If so, it may be like the difference between developing a uniform mechanism for squeezing a tube of toothpaste rather than trying to pump it out by forcing "air" (electric current) into the tube.

Its a long way from research to product... "squeezing" a nano scaled lattice like a tube of toothpaste can't be called easy... but at least we now have an accurate theory of the way this IP works sufficient to predict how it functions at the sub nm level and most importantly how those functions are effected by temperature and applied electricity. That's got to make a real difference for anyone trying to make a fast high density F-RAM... It certainly beats "shot in the dark" quantum experimentation.

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