Flash competition
Its written all over, that some stuff will replace "old tech".
That will be sure for floating gate, of course ... here is
one example of the "new tech" - MRAM.
babelfish.altavista.com
The 512Mbit phase change memory which you made on an experimental basis (PRAM) the tip/chip area is 91.5 squares mm. As for manufacturing technology CMOS of 90nm, 3 layer metal wiring.
Lets compare it with Spansions Quad on 90nm too.
Message 24261200
A 155mm2 8Gb data-storage memory based on a 4b/cell nitride ROM (NROM) in 90nm CMOS is introduced.
=> MRAM 512Mbit 90nm = 91,5mm^2
=> SPSN Quad 8Gbit 90nm = 155mm^2
=> SPSN Quad 4Gbit 90nm = 76mm^2
=> SPSN Quad has 8x size and has a smaller DIE. Ok, seems like
we could forget MRAM for the next YEARS! -> done.
OT - DRAM/NAND
Some Micron comments from their analyst meeting here:
download.micron.com
When I look at these slides too, I have real big headaches
when it comes to ramping NAND capacity. Toshiba is doing no
halt on anything, MU (IM JV) is ramping hard and Hynix and
Samsung seems also not to stop anything. I don't know what
these boys think about the market, but for me, they will have
way too much capacity in 2008 too. Could be, that SSDs will
gain presence, which they should hope - handsets will ship
with more Gbits, sure, but the market has to really grow
just to absorb all this stuff which will come out of the FABs.
It will be interesting to see Microns next quarterly numbers,
which will go far more into the red.
edit:
Seems like Intel sees (from 2007) some type of memory next to
the CPU on the same package: Spansions solution could some
into place, which I don't think will fast enough - I'm
wondering which type of memory will fast enough here.
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