IBM ... maybe not dead money now after so many years of under performance??
IBM and Samsung Unveil Semiconductor Breakthrough That Defies Conventional Design
With new Vertical Transport Field Effect Transistors, or VTFET, IBM and Samsung have successfully implemented transistors that are built perpendicular to the surface of the chip with a vertical, or up-and-down, current flow. - - Vertical device architecture demonstrates path to scaling beyond nanosheet
- - Aims to enable 85 percent energy reduction compared to scaled finFET transistors
- - Developed at the Albany Nanotech Complex in New York, home to world-leading ecosystem of semiconductor research and prototyping
ALBANY, N.Y., Dec. 14, 2021 /PRNewswire/ -- Today, IBM (NYSE:?IBM) and Samsung Electronics jointly announced a breakthrough in semiconductor design utilizing a new vertical transistor architecture that demonstrates a path to scaling beyond nanosheet, and has the potential to reduce energy usage by 85 percent compared to a scaled fin field-effect transistor (finFET)1. The global semiconductor shortage has highlighted the critical role of investment in chip research and development and the importance of chips in everything from computing, to appliances, to communication devices, transportation systems, and critical infrastructure.
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