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Technology Stocks : MEMC INT'L. (WFR -NYSE) The Sleeping Giant? -- Ignore unavailable to you. Want to Upgrade?


To: Kunal Taravade who wrote (4499)9/2/1999 7:09:00 PM
From: Andrew Vance  Respond to of 4697
 
Beat me to the punch here but I was working on converting the FAX to TXT format. I didn't even think to look at the linked site first. I thought it would be great to publish here and rub the noses of the naysayers that consistently have pointed out the inferior qualities of MEMC's products. Every time I read something like that, I try to verify the quality issue and can't find much negativity from my industry contacts. Anyway, for those that can double clik on the link, the story is below. I didn't want my efforts to go to waste and it did allow me the opportunity tov ist here.

Andrew Vance
avance@radarview.com
"The perpetual WFR Bull"

MEMC (WFR) Announces Advanced Wafer Innovation; Provides Customers with Higher Yields
Sept. 2, 1999--MEMC Electronic Materials, Inc. (NYSE: WFR) today announced the development e£ an advanced silicon wafer innovation for use in microelectronic applications. Wafers with this new feature, called Magic Denuded ZoneT (MDZT), produce internal gettering action during device processing far more reliably than has been achieved to date. This provides greater long-term manufacturing yield stability for customers. The principle behind the technique relies on patented technologies developed by MEMC that effectively and accurately control the distribution of crystal lattice vacancies on the wafers. The HDZT process can be applied to any polished silicon wafer and to P/P- epitaxial wafers to provide a well-defined and predictable level of internal getterinq and denuded zone depth during integrated circuit fabrication.

For the past 18 months both 150mm and 200mm MDZT treated wafers have been evaluated in some of the most advanced fabrication lines of MEMC's customers with tremendous success. The positive reaction by customers is due to higher yields with this material. MDZT treated wafers also provide two other major device manufacturing advantages: MDZT provides reliable internal gettering at lower thermal budgets, and it allows the elimination of several costly steps at the beginning of the device manufacturing process.

The behavior of oxygen in conventional silicon wafers is complex and has many sources of variation. For the past 20 years, the silicon and device industries have struggled to control this behavior with varying degrees of success. Conventional silicon wafers require additional treatments customized to the specific crystal process and device processing sequence. The Magic Denuded ZoneT process pre-programs the wafer to provide both a controlled denuded zone depth and density of oxygen precipitates in essentially any device processing sequence with no extra intervention required by the device manufacturer. "MDZT wafers do not need to be carefully tailored to a specific application, eliminating complexity in the silicon wafer business," commented Dr. Robert J. Falster, Director, Silicon Materials Research, MEMC. "MDZT wafers robustly produce distributions of oxygen precipitates with controlled densities and denuded zone depths in essentially any application."

Patents for MDZT have been applied for in all major countries, The U.S, application has already been allowed and will issue in the near future. Patent applications are also on file in Europe, Japan, South Korea, Taiwan, China, Singapore, and Malaysia. The international application published as WO 98/38675 on September 3, 1998.

Andrew