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Technology Stocks : Rambus (RMBS) - Eagle or Penguin -- Ignore unavailable to you. Want to Upgrade?

To: Bilow who wrote (29084)	9/9/1999 4:27:00 PM
From: Bilow	Read Replies (1) \| Respond to of 93625

Hi all; As long as I'm over at the Samsung website, I may as well post some links to some press releases. Now DDR doesn't get anywhere near the press that rambus, because no one is trying to get retail stock buyers to buy stock in a DDR technology play. So you will have to look around for the DDR PRs. Significant Samsung press releases: one-chip DDR/SDR design allows the new product to support both kPC100 and the new PC133 standard Single-Data-Rate SDRAMs as a fabrication manufacturing option samsungelectronics.com The above press release should give RMBS bulls some pause for thought. By the way, it is my opinion that Samsung is the best memory house in the world, for cutting edge, quality parts. June 28, 1999 - Samsung Electronics Co., Ltd. announced the successful development of the world's first 1Gb DDR SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) in a press conference with members of the Korean press held at its US-based production complex, Samsung Austin Semiconductor (SAS). The 1Gb DDR SDRAM, which can process data at speeds of 350-MHz, was developed by using the 0.13-micron design rule, an industry first. samsungelectronics.com Hey! Where are those 1Gb rambus memory chips??? If rambus is the technology of the future, how come the prototypes for the future are coming out in DDR? And why is Samsung preparing for a painless switchover to DDR, if it is not going to fly? -- Carl

To: Bilow who wrote (29084)	9/9/1999 7:08:00 PM
From: John Walliker	Read Replies (2) \| Respond to of 93625

Carl, From the above, it is quite obvious that given two memory systems of the same size, the rambus memory system is going to use about twice as much power. To make power consumption comparisons it is necessary to quote the supply voltage as well as the current. It is also necessary to know the duty cycle in each state. What you say is not obvious as the data is incomplete. The figures you quote do not tally with the Samsung data sheet I downloaded a few days ago [rdram128dAbook.pdf]. RDRAM blocks consuming power @ Tcycle=2.5ns Idd, PDN 3000uA max Idd, NAP 4mA max Idd, STBY 105mA max Idd, ATTN 165mA max Idd, ATTN-W 575/625mA max 16/18 bit Idd, ATTN-R 490/520mA max 16/18 bit STBY is the normal idle state of the RDRAM. Note also that there are low-power self refresh versions available too. Vdd = 2.5 V Vcmos = 2.5V or 1.8V The CMOS interface consumes power in all power states. b. This does not include the IOL sink current. The RDRAM dissipates IOLxVOL in each output driver when a logic one is driven. Vol cmos = 0.3V @ 1 mA max Not very much power. John