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To: unclewest who wrote (29693)	9/16/1999 12:53:00 PM
From: unclewest	Read Replies (2) \| Respond to of 93625

drip..drip..drip.. news flow is becoming overwhelming. unclewest CYPRESS, Calif., Sep 16, 1999 (BUSINESS WIRE) -- Foxconn International Inc., a leading manufacturer of connectors for the computer, communication and consumer industries, received approval for its new RIMM(TM) connector for Rambus(R) RIMM modules. This new memory connector has passed validation testing and meets the required specifications for use with Rambus RIMM modules. Foxconn's RIMM connectors will be available to OEMs in time for their expected end of September launch

To: unclewest who wrote (29693)	9/16/1999 1:03:00 PM
From: richard surckla	Respond to of 93625

>>sony rejected ddrdram outright.<< Yeah, If I recall correctly Sony claimed it was unstable.

To: unclewest who wrote (29693)	9/16/1999 3:47:00 PM
From: Allen champ	Read Replies (1) \| Respond to of 93625

Samsung reportedly starting new DRAM line By Jack Robertson Semiconductor Business News (09/16/99, 11:37:24 AM EDT) TAIWAN -- Samsung Electronics Co. has quietly launched construction of an entirely new 8-inch DRAM wafer line, which it is calling Line 10, in Korea, expected to go into production late next year or early 2001, according to equipment suppliers at this week's Semicon Taiwan show. David Wang, senior vice president of Applied Materials Inc., said Line 10 will be Samsung's last new 8-inch fab. A planned Line 11 fab to follow in another two years will be the Korean chip maker's first 300-mm wafer plant, he said. Samsung has confirmed acquiring the site in Korea for a new superfab complex, but parried questions on when construction would start. Exhibitors at Semicon, however, all agreed that Samsung was building the Line 10 building, and would start installing chip gear early next year. Samsung's decision to build another 8-inch fab reportedly was driven by the urgency in adding new capacity to meet higher demand at the end of next year, when DRAMs could fall back into market shortages. The fab is expected to be capable of moving towards 0.15-micron processing to make 256-megabit SDRAMs and advanced Direct Rambus DRAMs. Sources also said Samsung is determined to keep competitive production economies of scale in vying against its two DRAM superrivals -- Micron Technology Inc. and the new merged chip operations of Hyundai Electronics Industries Co. and the former LG Semicon. Applied Materials' Wang said the three memory giants next year will comprise 73% of the global DRAM market. Samsung this year will launch production of the last phase of Line 9 at Keihung which was equipped starting last winter. The sudden fab capacity expansions are the major reason Samsung this year twice increased its chip capital spending plans -- initially a $200 million boost to $1.2 billion, and then a jump to $1.8 billion. Semicon Taiwan exhibitors also were watching attempts by the Hong Kong government to attract a foreign partner to build the first front-end fab in the former British colony. Hong Kong has revived its efforts to launch a fab at the Silicon Harbor development area, after Motorola Semiconductor Products Sector decided not to build a wafer front-end plant in the area. Motorola has also put on hold its $2 billion fab under construction in Tianjin, China.