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To: THE WATSONYOUTH who wrote (92456)	11/15/1999 12:18:00 AM
From: Saturn V	Read Replies (1) \| Respond to of 186894

Ref-<The isotropic etch process etches the remaining poly (creating the notch) with high selectivity to gate oxide. > I thought of the same thing.But there is a problem with the scenario.The standard isotropic etch WILL NOT lead to the notched structure in the published picture.The poly will etch laterally from the place the isotropic etch is begun.The notch will be in the wrong place,ie the middle of the poly as opposed to the bottom, near the source drain. So I am still puzzled. The poly etch rate has to increase as the gate oxide is approached. I am still speculating how that can be done. Control the doping profile of the poly and use a isotropic etch, whose etch rate is a function of doping density ? Would appreciate any further comments from you. Regards.