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To: kinkblot who wrote (225)	3/18/2000 8:47:00 PM
From: John Finley	Read Replies (1) \| Respond to of 565

Re: Sumitomo GaN wafers Well, I guess they wouldn't have to worry about lattice mismatch <gg> Conductive too! Depending on the price and availability the SiC folks better watch out. I guess being an agricultural university helps them develop growing expertise. I wonder if they plan on selling the substrates or just using them for more "vertical" intentions? Good hunting, Will. (Good Will hunting?) JF

To: kinkblot who wrote (225)	5/11/2000 9:26:00 PM
From: sbaker23	Read Replies (1) \| Respond to of 565

TDI says they do single GaN crystals too--sort of... it seems a typically "Russian Army" approach, though...blow the SiC away after the GaN has grown.. tdii.com Currently, Technologies and Devices International, Inc. in collaboration with Crystal Growth Research Center, (St. Petersburg, Russia) is developing GaN bulk crystal fabrication technique by subsequent hydride vapor phase epitaxy (HVPE) of GaN on SiC substrates and selective removal of the substrate by reactive ion etching (RIE). Free-standing GaN wafers with 0.2-0.3 mm thickness and 30 mm diameter were fabricated...

To: kinkblot who wrote (225)	10/24/2000 8:48:45 PM
From: kinkblot	Read Replies (2) \| Respond to of 565

GaN wafers: progress at ATMI siliconinvestor.com ATMI has developed and patented processes that allow the manufacture of high purity GaN wafers 50mm and larger in diameter. Based on recent successes, ATMI has committed significant additional funding for continued development and pilot manufacturing capacity. In addition, ATMI has recently been awarded contracts totaling nearly $4M from the Office of Naval Research (ONR) and the Ballistic Missile Defense Operation (BMDO) to further develop GaN wafers for electronic and optoelectronic devices. I interpret that as "We've had some good results in the lab." Nevertheless, this is more evidence that it can be done, and that knowledge will also encourage others to intensify their efforts. WT