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To: kinkblot who wrote (2)	5/2/2000 5:01:00 PM
From: kinkblot	Read Replies (2) \| Respond to of 83

US Patent 5,374,564 issued 12/20/94 to Bruel Process for the production of thin semiconductor material films patents.ibm.com This patent was the first in which the general features of the Smart Cut® process were disclosed, and is often cited. The layer is separated thermally: the assembly is raised to a moderate temperature, 400°C to 600°C, which causes fracture along the hydrogen-implanted defect zone. Therefore, this method is not appropriate for applications requiring high temperature processing of devices before separation. By first forming an oxide on the donor wafer and then implanting through it, SOI substrates such as SOITEC's UNIBOND® wafers can be manufactured by this process. WT