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To: THE WATSONYOUTH who wrote (108587)8/27/2000 3:35:05 PM
From: semiconeng  Read Replies (1) | Respond to of 186894
 
By your comments, it is clear you still don't have even a fundamental understanding of the actual described process flow and thus could never have actually run this process.

I never said that "I ran IBM's process flow." I said that I know what it takes to maintain a tight process window on Reactive ION Etching. Go back and read it again yourself.

"If they are employing Dry Etch Techniques, to etch back the interconnect layer, then they are going to have lots of problems controlling the Etch Rates to insure that
they don't break trough the Poly Layer. I know all about the amount of intensive labor that it takes to maintain THE TYPE OF DRY ETCH RATES that this type of process demands for logic circuits,

SemiconEng