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Politics : Formerly About Applied Materials -- Ignore unavailable to you. Want to Upgrade?

To: Proud_Infidel who wrote (48801)	7/6/2001 4:50:03 PM
From: Proud_Infidel	Respond to of 70976

Nanya puts DRAM expansion plans on hold By Mike Clendenin EE Times (07/06/01 10:44 a.m. EST) TAIPEI Taiwan — Sickly pricing in the memory market has led Nanya Technologies Corp. to put the brakes on plans to expand its DRAM production. The company has nixed plans to boost its DRAM production from 25,000 wafers per month at its second 200-mm wafer fabrication facility to 30,000 wafers or more and is indefinitely delaying the completion of a 300-mm wafer fab. Nanya and Taiwan's other major memory makers are incurring heavy losses because the price of 128-Mbit DRAMs is below the break even cost for manufacturers. Analysts said the island's memory makers have lost more than $400 million in the first half of this year. Nanya alone has lost about $88 million. About a year ago Nanya increased production at its first eight-inch wafer fab from 22,000 to 30,000 wafers per month. About 80 percent of Nanya's capacity is committed to DRAM production. In related news, ProMOS Technologies Inc. is preparing to produce 256-Mbit DRAM at its new 300-mm wafer fab in the Hsinchu Science Park. The company — a joint venture between Infineon Technologies AG and Mosel Vitelic Inc. — is Taiwan's first DRAM maker to run a 300-mm (12-inch) wafer fab. ProMOS said it will start pilot runs at the fab in August using 0.14-micron process technology. The company will ramp up production during the first quarter of 2002 and hit a monthly capacity of 9,000 wafers in the second half of 2003. The fab will eventually churn out 18,000 wafers monthly.