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Politics : Formerly About Applied Materials -- Ignore unavailable to you. Want to Upgrade?

To: Proud_Infidel who wrote (54259)	10/18/2001 10:17:54 AM
From: Proud_Infidel	Read Replies (1) \| Respond to of 70976

Infineon ramps 0.14-micron process to cut 256-Mbit DRAM costs 30% New process shrink also being used to make samples of 512-Mbit devices Semiconductor Business News (10/18/01 09:47 a.m. EST) MUNICH -- Infineon Technologies AG today announced it has begun fabricating 512-megabit DRAMs and a shrunk version of 256-Mbit memory devices using a new 0.14-micron process technology at its 200-mm wafer fab in Dresden, Germany. "Our latest shrink version of the 256-Mbit DRAM is the smallest 256-Mbit in the industry, and will result in Infineon again having the best manufacturing cost position," declared Andreas von Zitzewitz, chief operating officer of Munich-based Infineon. Infineon said it has begun shipping early samples of the 512-Mbit DRAMs to strategic partners for evaluations. The 0.14-micron technology reduces the average 256-Mbit chip cost by about 30% with 18% smaller feature sizes than Infineon's previous leading-edge 0.17-micron process, said the company. Infineon said it deployed the new process in the Dresden plant during September, and it is preparing to use the 0.14-micron technology in 200-mm (8-inch) wafer fabs located in Richmond, Va., and Hsinchu, Taiwan. The Taiwan fab is operated by the ProMos Technologies Inc., a joint-venture company between Infineon and Mosel Vitelic Inc. Infineon also said it is planning production with the new 0.14-micron CMOS process to its 300-mm (12-inch) wafer processing lines in Dresden. The 300-mm module has already started "pre-production" wafer runs using the technology, according to the company. In Taiwan, the ProMos joint venture is expected to ramp the 0.14-micron technology for DRAM production in about three to six months.