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To: Dan3 who wrote (64403)11/27/2001 1:26:11 AM
From: Pravin KamdarRead Replies (2) | Respond to of 275872
 
Dan,

It's kind of interesting that, after all the crowing from Intel that AMD had already seen the gains from .13 because their gates were shorter than Intel's,
the reality is that (according to impartial 3rd party analysis) both companies were using the same gate lengths at .18, but Intel had already gone to thinner
oxides - "using up" what otherwise would have been an expected gain from moving to .13.


Interesting. This could be the root of Intel's leakage problems at 0.13u. If they couldn't reduce their gate oxide thickness by much (and still haven't gone to a high-k dielectric), their lowered operating voltage would have a hard time strongly inverting the channel unless it were leaky to start with (as I described in an earlier post). Cox must be increased, either by making the oxide thinner, or by forcing a higher electric field by going with a higher permittivity dielectric.

Pravin.