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To: Paul Engel who wrote (159685)	2/22/2002 10:48:10 AM
From: Yousef	Read Replies (1) \| Respond to of 186894

Paul, Re: "Gate dielectrics - the material between the gate electrode and the silicon substrate - are better when their dielectric constant is HIGHER ... Low dielectric constant materials are used as insulators BETWEEN metal and gate electrodes (layers) and inter-metal layers." Yes, Paul is absolutely CORRECT with these statements. I would also add that one problem for future process generations is that the gate thickness must be decreased to increase the gate capacitance. With silicon dioxide, going too thin will result in gate leakage directly through the gate dielectric. With the higherK materials used for the gate dielectric, then a thicker material can be used and gate "tunneling" can be reduced. Make It So, Yousef