To: Art Bechhoefer who wrote (25460 ) 9/12/2002 2:41:40 PM From: waitwatchwander Respond to of 196656 Intel to deploy SiGe at the 90-nm nodesiliconstrategies.com Semiconductor Business News (09/12/02 01:55 p.m. EST) SAN JOSE -- Intel Corp. here today disclosed more details about its 90-nm (0.09-micron) process, including plans to deploy silicon germanium (SiGe) in the mix. Intel plans to deploy a SiGe process in a communication-based version of its 90-nm technology, said Pat Gelsinger, vice president and chief technology officer for the company, during a keynote address at the Intel Developer Forum (IDF) today. “As part of our 90-nm platform, we will include silicon germanium,” Gelsinger said. The Intel CTO did not elaborate on its SiGe technology, however. Last March, Intel originally announced its 90-nm process, which will be exclusively made in its 300-mm fabs. Intel's first 90-nm product will be a high-speed Pentium 4-based processor comprising 330 million transistors and code-named Prescott. Prescott is due out in the second half of 2003, according to Intel. Intel spoke of its 90-nm process in March when the Santa Clara-based company announced fully functional, 90-nm SRAM chips with six-transistor memory cells. The 52-megabit SRAM test chips are being used as a prototyping vehicle for Intel's 90-nm process technology, dubbed P1262. Then, last month, Intel claimed it will be the first chip maker to utilize strained silicon at the 90-nm node, thereby beating IBM Corp. and others to the punch. Today, Intel said it has added SiGE to its 90-nm mix. And it also disclosed that it is using a 40-gigabit-per-second SerDes device and a wideband CDMA chip as the test vehicles for its 90-nm communications process.