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To: RikRichter who wrote (3835)	8/23/2003 8:47:11 AM
From: majaman1978	Respond to of 37387

Thx Rik I'm in NVEC as well after the last correction and am wondering if MMTIF will get some play if NVEC starts to really heat up, and even though it's basically a pos, they have some patents involving non-volatile memory (MRAM). MM

To: RikRichter who wrote (3835)	8/27/2003 9:59:20 PM
From: GARY P GROBBEL	Read Replies (1) \| Respond to of 37387

MMTIF...Rik...weak perhaps on the balance sheet but they have been in operation since 1985...they always seem to be able to pick up add'l funding...NVEC, which I passed on at 2.80 (owwwwwwww) would cost you $31.87 per sh, MMTIF .23. Risk/reward ratio? MMTIF:The Company's primary technology is based on ferromagnetism, which consists of microscopic magnetic elements and Hall effect sensors deposited on a substrate of silicon or glass. Each magnetic element stores one bit of data based on its ability to alternate between states of magnetic polarization, which states are determined by a Hall effect sensor normal to the magnetic field. The Company's technology represents ones and zeros by the different polarization of magnets. A magnet oriented north/south is a one and a magnet oriented south/north is a zero. The magnetic field strength and direction do not decay when power is switched off; therefore, the memory is non-volatile. Micromem has been pursuing the development of its two memory technologies. HEMRAM is a memory design with the magnetic bit aligned horizontally to the substrate. VEMRAM is a memory design with the magnetic bit aligned vertically to the substrate. HEMRAM The Company's horizontal element magnetic memory technology, HEMRAM, involves producing hybrid memories based on in-plane magnetization mechanism of horizontally oriented micron scale ferromagnetic thin films that act as storage elements. An in-plane magnetization generates a spatially inhomogeneous field profile with a narrow fringe field normal to the substrate. This fringe field results in a measurable Hall voltage across the probe terminals when a current flows through the sensor. Changing current direction will lead to a reversed Hall voltage. This intrinsically bipolar output forms the basis of non-volatile storage, logic gate and field sensing. Other firms conducting research and development in the magnetic non-volatile memory area include IBM Research, Ovonyx, Inc., Hewlett-Packard, Honeywell and Motorola. VEMRAM Micromem's vertical element magnetic memory technology, VEMRAM, uses a novel hybrid Hall effect magnetic random access memory (MRAM) scheme, which utilizes out-of-plane magnetization induced by vertically oriented high-aspect-ratio ferromagnetic posts. The VEMRAM cell is comprised of two parts, a high-aspect-ratio ferromagnetic storage post or bit (memory element) and a patterned high-mobility thin film Hall sensing element underneath the bit. The bit is vertically positioned or normal to the probe surface, which is necessary to suppress so-called N rotation, a tendency for the magnetic field in a ferromagnet to rotate away from its set direction under the influence of an external perturbing magnetic field. The memory bits and driving circuits can be directly constructed on a wafer where Hall sensors have already been produced by direct implantation or by epitaxial growth and patterned etching. In the writing operation, each bit is coerced to change its magnetic states by the drive current flowing along the surrounding single-turn electrical loop. When the drive current is reversed, the remnant state switches from one state to the other to store a new binary number. The reading process remains essentially the same as in the in-plane magnetization arrangement.