Silicon Investor (SI) -- The First Internet Community

STOCKTALK

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor. We ask that you disable ad blocking while on Silicon Investor in the best interests of our community. If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.

Technology Stocks : Advanced Micro Devices - Moderated (AMD) -- Ignore unavailable to you. Want to Upgrade?

To: combjelly who wrote (196906)	5/15/2006 5:17:16 PM
From: dougSF30	Read Replies (2) \| Respond to of 275872

And this also means the super-process isn't going to have such low leakage. Sniff. Wrong. intel.com As of early this year, they are calling for 5x lower leakage. Calling me a liar again, dougie? You don't seem to have any sources that substantiate specific claims like "4 times the risk", so it is not unreasonable to ask where this information is coming from. In fact, as it turns out, it appears you were completely wrong about that aspect of their 45nm process. Sniff. More from xbit, from early January: Intel Demos Working 45nm Chips. Intel Shows Off 45nm Chips Category: Other by Anton Shilov [ 01/25/2006 \| 08:14 PM ] Intel Corp. today announced it has become the first company to reach a milestone in the development of 45nm logic technology. Intel has produced what are believed to be the first fully functional SRAM (Static Random Access Memory) chips using 45nm process technology, its next-generation, high-volume semiconductor manufacturing process. “Our 45nm technology will provide the foundation for delivering PCs with improved performance-per-watt that will enhance the user experience,” said Bill Holt, vice president, general manger, Intel technology and manufacturing group. Intel’s 45nm process technology will allow chips with more than five times less leakage power than those made today, according to the company. This will improve battery life for mobile devices and increase opportunities for building smaller, more powerful platforms. The 45nm SRAM chip has more than 1 billion transistors. Though not intended as an Intel product, the SRAM demonstrates technology performance, process yield and chip reliability prior to ramping processors and other logic chips using the 45nm manufacturing process. It is a key first step in the march toward high-volume manufacturing of the world’s most complex devices. Achieving this milestone means Intel is on track to manufacture chips with this technology in 2007 using 300mm wafers, and continues the company’s focus on pushing the limits of Moore’s Law, by introducing a new process generation every two years. In addition to the manufacturing capabilities of its D1D facility in Oregon, where the initial 45nm development efforts are underway, Intel has announced two high-volume fabs under construction to manufacture chips using the 45nm process technology: Fab 32 in Arizona and Fab 28 in Israel. Today, Intel operates two manufacturing facilities making 65nm chips in Arizona and Oregon and two more coming online this year in Ireland and Oregon.