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To: dougSF30 who wrote (196927)5/15/2006 6:19:30 PM
From: Hans de VriesRead Replies (1) | Respond to of 275872
 
Re:See my edit-- isn't static growing rapidly as a portion with each shrink?

Yes this was indeed the case because they where shrinking the
gate dioxide to less the 1.2 nm. They already stopped shrinking
the dioxide and fixed the worst leakage problems there with SiNi.

This is the reason why you see all these SiGe stress tricks
to increase transistor performance without increasing the
leakage.

Regards, Hans


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