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Technology Stocks : JMAR Technologies(JMAR) -- Ignore unavailable to you. Want to Upgrade?


To: Starlight who wrote (3787)11/4/1997 12:14:00 AM
From: timwa  Read Replies (2) | Respond to of 9695
 
Betty, do you think that the machine described in the article on the Ultratech thread might be related to the work JMAR has been doing with the Collimator at Lawrence Livermore National Labs?

From the article:

People who have seen it say that a machine housed in a
government laboratory in California appears an unlikely contraption for all the stir it is causing _ a collection of mirrors, a laser bolted to a stainless steel lab bench, some clamps and other gadgets. But despite its awkward appearance, the machine is the most sophisticated device of its kind in the world and may hold the key to the future of one of America's largest and fastest growing industries: computer chips.


__________________________________________________________

From government description of contract award to JMAR:

JMAR Technology Co. (JTC) is developing a laser-produced plasma x-ray point source, generating x-rays in a wavelength range around 11A. This source may be used in future lithography systems to manufacture semiconductors having 0.13 micron features. The efficiency of the source, and hence the throughput of semiconductor wafers, could be significantly enhanced by use of an x-ray collimater to effectively transform the spherical x-ray radiation pattern of the point source toa linear beam. Lawrence Livermore National Laboratory (LLNL) is developing x-ray collimators for point sources in this wavelength range, based on a conical reflecting surface, coated with multilayer x-ray mirror to achieve reflectivity. In Phase I, this STTR proposes to couple a prototype LLNL collomator to the JTC source, and carry out a series of measurements to characterize the system performance relative to the requirements for 0.13 micron lithography. This data will include beam divergence and collimator gain, and will be used in a preliminary design of a scanned-beam system which meets the exposure uniformity requirements for lithography. In Phase II, the scanned-beam system will be constructed and used to demonstrate lithographic transfer of features from a mask to a wafer.

Source: nttc.edu