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To: AB who wrote (23043)	1/22/1998 8:53:00 PM
From: Yousef	Read Replies (2) \| Respond to of 33344

AB, Re: "You keep claiming that the TSMC .25um process is comparable speedwise to the INTC .35um process. Do you have any SPECIFIC process numbers to back this claim up?" The reason that I draw this conclusion is because at 2.5V, the minimum gate thickness will be about 50Angstroms (optical) and the drawn gate length will be .28um. This is because if you go thinner on the gate or shorten the gate, one will have reliability problems. Thus since TSMC is using a supply voltage of 2.5V, they won't be able to go below these dimensions. BTW, these dimensions are a few of the most important parameters that determine the drive current (Idsat) of the FET's. In this process generation, FET drive currents are what dictate CPU speeds. Also for reference, Intel also uses 2.5V for their .35um process ... thus the 2.5V .25um TSMC device will give similar FET characteristics to the Intel .35um process. Here is another post from a while back: techstocks.com Make It So, Yousef