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To: Jeff Leader who wrote (27274)	1/28/1998 1:01:00 PM
From: Megs	Read Replies (4) \| Respond to of 53903

Jeff, Your right I did harp on the nomenclature, but I'm an engineer I can't help it, I'm anal. (Grim, so help me if you comment I'll have to slap you!) The fabrication costs will be the same for for "x"DRAM. The 256Mbit DRAMs and soon 1Gbit DRAMs are just process monitors. "Can we fabricate 256 million memory cells on one die?" By using a simple DRAM interface they can concentrate on the process problems and not on the interface design problems. But! (and it's a big but, Grim...) The interface design does add cost when it comes to testing these chips. Ask the manufacturers what it will cost them to meet the PC100 spec. All new testers at $1mil apiece is going to hamper their overall production costs and THAT is where the Koreans will feel the pain. Meg

To: Jeff Leader who wrote (27274)	1/28/1998 1:13:00 PM
From: DavidG	Read Replies (2) \| Respond to of 53903

Jeff, I think you guys blow this nomenclature problem way out of proportion. You have to distinguish between products today b/c the companies are each producing different types and you have to be careful of what they are talking about. That is why some are getting confused when comparing between the Koreans and MU. Even in your own reference it distinguished between DRAM and SDRAM. the advanced memory chips will work on data at a speed of 6 nanoseconds, more than twice as fast as ordinary DRAM chips. Also the author of the post that Meg was commenting on was talking about SRAM and DRAM which gave that appearance of ignorance of memory products as well as old information. DavidG