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To: Paul Engel who wrote (5846)	4/28/1998 8:47:00 AM
From: Maxwell	Read Replies (1) \| Respond to of 6843

Dr. Engel: Thanks for the informations. You got me again. The 450MHz SRAM was built with sub 0.25um front end (gate 0.22um) and 0.35um backend. I am wondering how fast the SRAM would go if they shrink the gate to 0.18um. <<Memory devices generally do not place extreme emphasis on interconnect density as do logic devices with massive bussing and control signal requirements.>> True but as you go to higher speed the read and write lines (longest paths in the SRAM) should have lowest resistance as possible. Maxwell