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To: Bill Jackson who wrote (61960)8/6/1998 7:14:00 PM
From: Gordon Hodgson  Read Replies (1) | Respond to of 186894
 
Interesting article on SOI

Intel tests cast doubt on IBM chip 'breakthrough'

SOI isn't always what it's cracked-up to be, says internal document
Posted 5 August 1998

IBM's latest 'magic bullet' for faster, more efficient chips has failed to impress Intel's engineers, as an Intel internal briefing document makes clear.

Earlier this week, IBM said it had mastered a technology called silicon on insulator (SOI) which would give both a performance breakthrough and a reduction in power consumption on semiconductors. That, claimed IBM Microelectronics, could lead to processors operating at three times the speed they currently do.

But an internal briefing document from Intel shows that the chip giant has made its own research into SOI and found it wanting.

According to the briefing, Intel's conclusion is that SOI gives lower performance for its higher performance semiconductors than current silicon technology. It has demonstrated fast 450MHz SRAMs using a 0.25 micron SOI technology but that is slower than a 550MHz SRAM it is producing using standard silicon.

The reasons are technical. According to the briefing, SOI shows an 18 per cent better performance for gate loaded circuits because of reduced junction capacitance, but delivers 15 per cent lower performance for interconnect loaded circuits than the silicon currently available.

Intel also said that in high speed CPUs where interconnects account for over 30 per cent of the total semiconductor capacitance, SOI offers insignificant power reduction.

That means that SOI will provide no speed and insignificant power advantages for sub-0.25 micron logic applications, said Intel.

IBM Microelectronics could not be contacted for its reaction to Intel's rebuttal.

Logical Networks
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