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Technology Stocks : Semiconductor Industry Sales Trends -- Ignore unavailable to you. Want to Upgrade?

To: Ed Hawkins who wrote (95)	9/22/1998 1:58:00 PM
From: Henry D	Respond to of 105

anyone has data on IC year to year growth on a monthly results?

To: Ed Hawkins who wrote (95)	9/23/1998 1:54:00 PM
From: Michael Sphar	Respond to of 105

OKI capitulation, note capital spending reduction: A service of Semiconductor Business News, CMP Media Inc. Story posted 1:30 p.m. EDT/10:30 a.m. PDT, 9/22/98 Oki to pull out of 256-megabit DRAM race TOKYO -- Oki Electric Industry Co. here will withdraw from the next-generation DRAM market by scrapping plans to mass-produce 256-megabit memory chips, company president Katsumasa Shinozuka, said at a news conference today. Shinozuka said Oki would concentrate on producing chips for its core telecommunications and custom applications business. As a result, he expected DRAMs to fall from 30% of chip revenues this year to 15%. Oki expects to report a $318 million (43 billion yen) loss for the current fiscal year ending next March 31. The firm is cutting its capital spending on semiconductors to $94 million (12.4 billion yen) in the current fiscal year, down from $312 million (42.4 billion yen) in the year ending March 31, 1997.

To: Ed Hawkins who wrote (95)	9/23/1998 1:58:00 PM
From: Michael Sphar	Read Replies (2) \| Respond to of 105

MU branching out into SRAM: A service of Semiconductor Business News, CMP Media Inc. Story posted 3 p.m. EDT/noon PDT, 9/22/98 Micron samples 400-MHz 4-megabit DDR SRAM BOISE, Ida. -- Micron Technology Inc. here announced today that samples of 400-MHz double data rate (DDR) SRAM are currently shipping for engineering evaluation. "Our 4-megabit DDR SRAM is designed to meet the high-speed cache and buffer memory requirements for leading-edge microprocessors and network systems designs," said Mike Black, Micron Technology's SRAM marketing manager. "Data communication applications can also take advantage of the 400-MHz data rate to maximize bandwidth in high-speed traffic designs," he added. "The fastest control signals operate at one-half the selected data rate. This feature allows relatively slow ASICs to control much faster data flow." Produced on Micron's state-of-the-art, six-transistor cell process, the 400-MHz DDR SRAM is a next-generation cache architecture for workstations and servers, as well as high-speed memory for networking and data communications. "Our goal was to utilize our CMOS technology to reduce the cost of very high-performance DDR SRAMs," said Black. Micron is currently working on a 450-MHz version of this product.