To: Alan Gallaspy who wrote (21178 ) 2/24/1999 2:56:00 PM From: Zeev Hed Read Replies (2) | Respond to of 25960
Alan, let me tell you a small anecdote. During 1970, I came up with a crazy idea of semiconductor devices in which the active I?V characteristic was not controlled by the concentration of minority charge carriers (as in Si type devices) but by controlling the mobility of majority charge carriers. The idea was, of course, one would not have to be too religious about impurities and such trivial things. I was at Battelle at the time, and everyone thought it was a great idea and Battele even filled a patent (3,686,096). Little did I know. So, the marketing types contacted the big semi houses of the day (Fairchilds, GE, Rayteon) and came back with the sorrow story, guys, they already have few billions invested in the Si technology, impurities are no problem, come back with lower cost packaging and we will talk to you. Well, today, there is probably a trillion bucks invested in the technology and unless plastics comes up with something that performs twice as good at half the price, and that, with minimal investment, it will never garner the investment required to get down the learning curve that Si has gone through. Some 15 years ago, the "battle cry" was that GaAs will replace a big chunk of silicon chips because its electronic properties are so great, but the GaAs people, those that survived, are still fighting a daily battle of "there is no problem so great you cannot run away from", meaning, while they are excellent at very high frequencies, they continuously need to go to higher frequencies since good old Si keeps pushing their boundaries of performance. GaAs was and still is a minuscule amount of total semiconductors shipped, 15 years after being proclaimed the "material of the future". Last, CYMI does not really care if you "etch" those submicron features in Si, GaAs, polymers or superconductors, they still will be selling you the right "light bulbs" to do it with. Zeev