Silicon Investor (SI) -- The First Internet Community

STOCKTALK

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor. We ask that you disable ad blocking while on Silicon Investor in the best interests of our community. If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.

Politics : Formerly About Advanced Micro Devices -- Ignore unavailable to you. Want to Upgrade?

To: Yousef who wrote (50978)	2/25/1999 5:28:00 PM
From: kash johal	Read Replies (2) \| Respond to of 1572161

Yousef, Re: AMD reliability issue. You have posted several times on this thread on this. Perhaps you could clarify your points a tad more clearly: 1. Are you stating that you believe that AMD k6-3's are a reliability hazard and that they do not have the life test data in hand on TDDB and HCI to ensure no problems at 2.4V operation. 2. Are you stating that you believe based on what you know of AMD's process and it's gate oxide thickness that is likely to cause TDDB and HCI by operating at 2.4 Volts. As you know many folks who are investors read these threads and you are an expert in the field of semiconductor processing so I think a clear statement would be most helfull to those of us who are unclear on this issue. Regards, Kash Johal.

To: Yousef who wrote (50978)	2/25/1999 6:12:00 PM
From: RDM	Respond to of 1572161

<First, Intel's .25um process uses a 32A gate oxide (measured optically).> What is the thickness of AMDs thin gate oxide on the K6-III process?

To: Yousef who wrote (50978)	2/26/1999 12:50:00 AM
From: Paul Engel	Read Replies (2) \| Respond to of 1572161

Yousef - Re: "Hot Carrier Injection (HCI) results. What happens with HCI is that electrons from Source are "trapped" at the gate oxide/silicon interface due to the higher E-field caused by the "jacked up" voltage on the gate. These "trapped" electrons cause the Vt of the FET to increase which decreases the Idsat of the FET." AMD knows all about this ! They shipped IBM some "jacked-up" 80C286's about 10 or 12 years ago - they lasted a few days on system tests at IBM before failing for Hot Electron Trapping. Seems that AMD never thought to test for this prior to shipping those turkeys. As I recall, AMD was not using LDD (Lightly doped drains) at that time and the high drain fields were the cause of the problem. Paul