SI
SI
discoversearch

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor.  We ask that you disable ad blocking while on Silicon Investor in the best interests of our community.  If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.
Technology Stocks : Rambus (RMBS) - Eagle or Penguin -- Ignore unavailable to you. Want to Upgrade?


To: unclewest who wrote (20338)5/15/1999 5:52:00 AM
From: unclewest  Read Replies (1) | Respond to of 93625
 
news...

Date: 05/15 01:23 EST

Die shrink expected to cut cost of Direct RDRAM -- Toshiba, NEC roll smaller dice for Rambus

May. 14, 1999 (Electronic Engineering Times - CMP via COMTEX) -- Tokyo
- In a move that is expected to help knock down the cost of Direct
RDRAMs, two leading Japanese DRAM makers said they will soon use a
0.2-micron die shrink to produce 128- and 144-Mbit versions of the
ultrafast DRAM devices. The chips are slated to move into volume
production in time for Intel's scheduled release of its first
Rambus-based chip set-the Camino-in September.

Toshiba Corp. announced it is shipping samples of what it claims is
the industry's smallest die-sized 128- and 144-Mbit ECC Direct Rambus
parts. The company plans to start producing the chips in volume at its
Yokkaichi fab in the third quarter.

Toshiba said the die sizes for the new 128- and 144-Mbit Direct
RDRAMs are 103 mm2 and 114 mm2, respectively. By comparison, Toshiba's
latest 0.2-micron 128-Mbit SDRAMs
(http://www.toshiba.com/taec/nonflash/indexproducts.

html) have a die size of 91.7 mm2, making the Rambus part about 12
percent larger than the standard device.

The typical die penalty for Direct Rambus has been 20 percent or
more, according to analysts and industry observers. Along with higher
test and packaging costs, the die penalty of Direct Rambus devices is
considered to be one of the biggest contributors to the their high
price.

In addition, Toshiba has chosen a lower-cost 62-pin chip-scale
packaging (CSP) technology. The technology uses standard wire bonding,
which the company did not employ when it introduced samples of its
earlier, 72-Mbit Direct Rambus device, a company spokesman said. Using
that package, chips can be mounted on both sides of a RIMM module,
enabling module capacities of 256 and 288 Mbytes.

Device samples are approximately $83 and $99 for the 128- and
144-Mbit devices, respectively. Japanese companies' sample prices are
typically about three to four times more than volume-production prices,
the spokesman said.

Even with the die shrinks, Direct Rambus won't likely be as cheap as
SDRAM. Today, DRAM manufacturers sell 64-Mbit devices at prices ranging
from $7 to $9. But OEMs have shown a willingness to pay extra for
better DRAM performance, the Toshiba spokesman said. "If Toshiba can
offer, say, $25 for the [128-Mbit] volume price, it's very
competitive," he said. "Rambus is still much more costly than
synchronous; however, the speed is better, and many PC vendors really
want to have Rambus DRAM now."

Similarly, NEC Corp., which started selling samples of its
0.22-micron-based 128-Mbit Direct RDRAM
(http://www.ic.nec.co.jp/memory/english/products/dram/rmbs-144.html)
last month, plans to shift to a 0.2-micron process technology before
the company starts volume production of the parts in July, a company
spokesman said.

Currently, NEC's128-Mbit Direct RDRAMs have a die area of 132-mm2,
and its 128-Mbit SDRAM die is 106 mm2. "When it goes to 0.2 micron,
[the Direct RDRAM part] should be about the same size as the Toshiba
chip," the NEC spokesman said.

At about the same time, the spokesman said, NEC will likely introduce
samples of 0.2-micron-based 144-Mbit devices, which will be used mainly
in high-end systems with large banks of main memory.

Both NEC's and Toshiba's 128-Mbit Direct RDRAMs employ a 256k-word x
16-bit x 32-bank memory structure and operate at a maximum frequency of
800 MHz to deliver 1.6-Gbyte/second performance. The supply voltage is
2.5 V.

Toshiba, for its part, has a strong incentive to become a leading
supplier of Direct RDRAMs. Aside from aiming to fulfill pent-up demand
generated by PC OEMs, the company is involved in a joint design and
manufacturing agreement for key processors that will be used in Sony
Corp.'s next-generation Playstation, which will use Direct Rambus
DRAMs. "Toshiba has already got a good user: Sony," the spokesman said.

He said demand for Direct RDRAMs will be driven primarily by PCs and
the next-generation Playstation, which is expected to hit store shelves
in Japan by the end of the year. He noted, however, that new DRAM
technology was hit with a setback earlier this year when Intel decided
to delay the introduction of the Camino chip set. That has opened up
opportunities for faster DRAMs based on SDRAM technology.

"The Camino chip set was delayed only three months; however, the PC
vendors' design time was delayed much longer-at least six months or
so," he said.


-0-

By: Anthony Cataldo
Copyright 1999 CMP Media Inc.




To: unclewest who wrote (20338)5/15/1999 5:57:00 AM
From: unclewest  Respond to of 93625
 
news

Date: 05/15 01:26 EST

Denali Turbo-charges Rambus; Compaq's 'in'

May. 14, 1999 (Electronic Engineering Times - CMP via COMTEX) --
Memory-modeling software provider Denali Software Inc. (Palo Alto,
Calif.) has released its Turbo Channel simulation model for Rambus and
announced that Compaq Computer Corp. is among the first systems houses
to license the technology. Compaq will use the model in the development
of next-generation Alpha processors.

Denali sells Turbo Channel as an option to its RDRAM verification
kit, which it announced in October. According to company president
Sanjay Srivastava, the new technology, which will be sold as an option
to the RDRAM verification kit, models the Rambus channel rather than an
individual memory component and as such will speed systems simulation
as much as 20 times.

Rambus DRAM is a memory subsystem that promises to transfer up to 1.6
billion bytes per second. The subsystem consists of the RAM, the RAM
controller, and the bus that connects the RAM to the microprocessor and
other devices in the computer that use it.

"RDRAM has a new packet-based protocol," said Srivastava. "We created
the new technology so customers could take full advantage of Rambus'
performance. Turbo Channel allows them to build Rambus applications
that are faster, and it offers them better memory-system debugging
capabilities."

According to Srivastava, the Turbo Channel model, written in C,
implements techniques for performance optimization when the Rambus
Channel being modeled has many components connected to the channel.

The Turbo Channel model costs $5,000. Denali's RDRAM Verification
kit, with the Turbo Channel model and Denali's AutoTest
automatic-test-vector generation program and debugging software, costs
$80,00.

Denali models and tools run on Windows and Unix platforms. See
www.denalisoft.com.