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To: pgerassi who wrote (228548)3/20/2007 3:09:59 PM
From: dougSF30Read Replies (2) | Respond to of 275872
 
The thermal resistance added is at most 0.1%

Says who? You?



To: pgerassi who wrote (228548)3/20/2007 5:21:25 PM
From: MagratheaRead Replies (3) | Respond to of 275872
 
Thermal Conductivity of Si = 1.5 W/(cm-K) at 300K.
Thermal Conductivity of Si02 = 0.014 W/(cm-K) as 300K.
virginiasemi.com

That means the bulk silicon is 7700 times thicker than the oxide layer. The thermal resistance added is at most 0.1%.

But a given thickness Si02 has the same heat transfer as Si that is 100 times thicker. Thermal resistance added with 100nm of Si02 is more like 1.5%.

Of course all this assumes that the substrate is between the transistors and the heatsink or the point is moot.

-Magrathea



To: pgerassi who wrote (228548)3/20/2007 5:33:19 PM
From: Saturn VRead Replies (2) | Respond to of 275872
 
The wafer is 775um (microns) thick.

Misleading !!!.
The silicon is lapped to a much smaller thickness for a finished device to improve the heat transfer, particularly for high power devices.

Final thickness in the 100um to 300um range.


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