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Technology Stocks : Advanced Micro Devices - Moderated (AMD) -- Ignore unavailable to you. Want to Upgrade?

To: Rink who wrote (229002)	3/26/2007 5:06:44 PM
From: dougSF30	Read Replies (3) \| Respond to of 275872

Well, that wasn't what Elmer was claiming. But that might be the case, I suppose.

To: Rink who wrote (229002)	3/26/2007 5:22:35 PM
From: titon1	Respond to of 275872

Maybe related: eclipseoc.com The last AMD CPU I took a look at was the 3400+ Sempron, which turned out to be a very good overclocker and offered good performance for the price. With recent price drops, I was browsing around, looking to see if anything warrented a closer inspection. The 2.6GHz 4000+ caught my eye. Being a single core, it costs about as much as the 3400+ did when I purchased it almost 10 months ago. However, that is not the real reason why this CPU is so special. Relatively recently, AMD quietly unleashed a new 90nm silicon revision, "F3". All of the previous AM2 chips were based on "F2" silicon. I asked around, but AMD was unwilling to tell me what makes the new revision different from the old one. Allow me to put on my tinfoil hat for a minute here, and reveal my OPINION of what AMD is doing with the silicon. There have been reports for a long time now of AMD working on a 3rd generation of strained silicon technology. Basically it is Silicon with Germanium; SiGe for short. I will not get into the technical details of this, but the idea is to improve transistor performance. As I get into the overclocking portion of the review, it will become apparent as to why I suspect this. However, I will emphasize that this is just my guess. There is no proof, nor confirmation from AMD that this is true. The CPU looks just like any other, with one interesting curiosity. The IHS indicates that it was "Diffused in Germany", which is a new designation for me.

To: Rink who wrote (229002)	3/27/2007 4:24:55 PM
From: TGPTNDR	Read Replies (1) \| Respond to of 275872

Rink, Re: They may have difficulties with their latest form of strain because power hasn't improved much yet from 90nm to 65nm. But there are many other reasons for this too....> I don't think there's any doubt remaining, at least to me, that AMD 65 Nm is having more problems than I anticipated. At the same time, though, I'm of the Opinion that while their 65 Nm is Stuck, that 90 Nm is continuing to use APM gathering data to go beyond, in performance, where 90 Nm was intended to cross over the 65 Nm process. IMO AMD most likely set an aggressive performance/watt goal for 65 Nm process and is sticking to the process/design, as closely as they can while trying to get yield irrespective of bin split. (Remember that for at least a year, and maybe two, AMD has been saying no immediate performance advantage but performance/watt in going to 65 Nm.) This is something we've seen happen before. It is gratifying, at least to me, to see volume of 65 Nm at any speed even while the bin splits are not there, as compared to the continually progressing 90 Nm. With practice comes results and volume practice seems now, at last here. It's on the order of my post of last ?December? indicating my Opinion that Intel had gotten, finally, their 65 Nm CMW production working properly. We shall see. I Hope AMD's spring and summer manufacturing progress results will prove more satisfactory than the fall and winter ones. I expect them to, -tgp

To: Rink who wrote (229002)	3/28/2007 4:29:02 AM
From: FJB	Respond to of 275872

Strained Silicon: Essential for 45 nm Silicon stressor techniques can be combined to provide cost-effective, low-risk ways of delivering next-node mobility improvements and drive currents. ... Conclusions Compressive nitride and eSiGe S/D stressors combine well to optimize pFET mobility. Tensile nitride stress liners and stress memorization have primarily been used to optimize nFETs. Companies that are using partially depleted SOI substrates are benefiting from sSOI with careful process optimization. The choice of stressors will largely be dictated by cost-effectiveness and production-worthiness of the stressor techniques as more advanced approaches begin entering the fab environment. reed-electronics.com