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Politics : Formerly About Advanced Micro Devices -- Ignore unavailable to you. Want to Upgrade?

To: Yousef who wrote (41264)	11/11/1998 6:13:00 PM
From: Paul Engel	Read Replies (1) \| Respond to of 1572604

Yousef - Re: "16 Mbit SRAMs with a 5.59 mcell size have been built on this technology with excellent performance and yield." That is excellent process scaling ! The 6'th metal layer must do it! The 0.25 micron process had a 10.26 sq. micron Cell size (6 transistors). Scaling this would produce ((0.18/0.25)^2)*10.26 = 5.18 sq. micron and Intel achieved 5.59 - only 8% off THE theoretical shrink factor ! These small cells will come in handy as Intel crowds 1 or 2 million BYTES of Cache SRAM on to their new CPUs ! Paul

To: Yousef who wrote (41264)	11/13/1998 1:48:00 AM
From: Kenith Lee	Read Replies (1) \| Respond to of 1572604

"1:35 p.m. 8.1 A High Performance 180 nm Generation, 140 nm LGate Logic Technology, M. Bohr, Intel Corporation, Hillsboro, OR A 180 nm generation logic technology has been developed with high performance 140 nm LGATE 1.3-1.5 V transistors and six layers of aluminum interconnects. Yousef, This is the reason why your Intel engineers said you are an idiot! For 0.25um logic technology, the gate length ends near 140nm. You are still insisting at 220 +/- 20nm. For 0.18um, it starts out at 140. Have you wonder how Intel can go from 200nm (your number) on a 0.25um generation to 140nm? If Intel can sucessfully print 140nm gate, don't you think they will make use of it (or somewhere between 200-140nm) for the 0.25um technology first? Get faster parts and milk the public in the mhz game? They already have, wake up Yousef! You may wonder how can the gate length be so much smaller than the most advance stepper can print. This is for you to find out, Mr. Expert! Please be a little more open mind next time. Here is the link to remind you. Message 6232814 -KL