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Politics : Formerly About Advanced Micro Devices -- Ignore unavailable to you. Want to Upgrade?

To: RDM who wrote (50967)	2/25/1999 2:01:00 PM
From: Elmer	Read Replies (4) \| Respond to of 1572107

Re: "The heat problems are from high voltage and large die and high MHz. Solutions for heat are die shrink. High voltage is used for speed, but results in more heat. High temperature cause slow speed. Thus if heat is not removed it will diminish the benefits of the high voltage." Did you notice how AMD specs the case temp at 65 deg C while generating more than 30 Watts? You have to move a whole lot a heat away to keep it that cool. EP

To: RDM who wrote (50967)	2/25/1999 4:41:00 PM
From: Yousef	Read Replies (3) \| Respond to of 1572107

RDM, Re: "It is in the range of 50-150 angstroms. AMD probably has a thicker thin gate oxide which would be able to handle higher "jacked-up" voltages." RDM, you are out of your "field of expertise" ... First, Intel's .25um process uses a 32A gate oxide (measured optically). Secondly, "jacking up" the voltage not only could cause gate oxide failure (TDDB) but it will also give poorer Hot Carrier Injection (HCI) results. What happens with HCI is that electrons from Source are "trapped" at the gate oxide/silicon interface due to the higher E-field caused by the "jacked up" voltage on the gate. These "trapped" electrons cause the Vt of the FET to increase which decreases the Idsat of the FET. Thus if there is an HCI problem, your CPU will work fine for a while and then it won't work at the advertised speed (it will work fine at lower speeds). Changing the operating voltage requires a lot of characterization and reliability testing ... Hopefully, AMD has done this and would TELL their customers if there was a problem. It will probably be handled by AMD just like the WIN95 K6-2 problem ... That should fill you with confidence. <ggg> Make It So, Yousef